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| MBT3904DW1T1, MBT3906DW1T1, MBT3946DW1T1 Dual General Purpose Transistors The MBT3904DW1T1, MBT3906DW1T1, and MBT3946DW1T1 devices are spin-offs of our popular SOT-23/SOT-323 three-leaded devices. They are designed for general purpose amplifier applications and are housed in the SOT-363 six-leaded surface mount package. By putting two discrete devices in one package, these devices are ideal for low-power surface mount applications where board space is at a premium. * hFE, 100-300 * Low VCE(sat), 0.4 V * Simplifies Circuit Design * Reduces Board Space * Reduces Component Count * Available in 8 mm, 7-inch/3,000 Unit Tape and Reel * Device Marking: MBT3904DW1T1 = MA MBT3906DW1T1 = A2 MBT3946DW1T1 = 46 MAXIMUM RATINGS Rating Collector - Emitter Voltage MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP) Collector - Base Voltage MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP) Emitter - Base Voltage MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP) Collector Current -- Continuous MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP) Electrostatic Discharge Symbol VCEO 40 -40 VCBO 60 -40 VEBO 6.0 -5.0 IC 200 -200 ESD HBM>16000, MM>2000 V (4) (5) MBT3946DW1T1* Unit mW C/W C *Q1 same as MBT3906DW1T1 Q2 same as MBT3904DW1T1 (6) mAdc Q1 Q2 Vdc Vdc Value Unit Vdc Q1 Q2 http://onsemi.com 65 4 1 2 3 SOT-363/SC-88 CASE 419B STYLE 1 (3) (2) (1) Q1 Q2 (4) (5) MBT3904DW1T1 (6) (3) (2) (1) (4) (5) MBT3906DW1T1 (6) (3) (2) (1) THERMAL CHARACTERISTICS Characteristic Total Package Dissipation(1) TA = 25C Thermal Resistance Junction to Ambient Junction and Storage Temperature Range Symbol PD RqJA TJ, Tstg Max 150 833 - 55 to +150 ORDERING INFORMATION Device MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1T1 Package SOT-363 SOT-363 SOT-363 Shipping 3000 Units/Reel 3000 Units/Reel 3000 Units/Reel 1. Device mounted on FR4 glass epoxy printed circuit board using the minimum 1. recommended footprint. (c) Semiconductor Components Industries, LLC, 2000 1 February, 2000 - Rev. 1 Publication Order Number: MBT3904DW1T1/D MBT3904DW1T1, MBT3906DW1T1, MBT3946DW1T1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector - Emitter Breakdown Voltage(2) (IC = 1.0 mAdc, IB = 0) (IC = -1.0 mAdc, IB = 0) Collector - Base Breakdown Voltage (IC = 10 mAdc, IE = 0) (IC = -10 mAdc, IE = 0) Emitter - Base Breakdown Voltage (IE = 10 mAdc, IC = 0) (IE = -10 mAdc, IC = 0) Base Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) (VCE = -30 Vdc, VEB = -3.0 Vdc) Collector Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) (VCE = -30 Vdc, VEB = -3.0 Vdc) V(BR)CEO MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP) V(BR)CBO MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP) V(BR)EBO MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP) IBL MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP) ICEX MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP) -- -- 50 -50 -- -- 50 -50 nAdc 6.0 -5.0 -- -- nAdc 60 -40 -- -- Vdc 40 -40 -- -- Vdc Vdc ON CHARACTERISTICS (2) DC Current Gain (IC = 0.1 mAdc, VCE = 1.0 Vdc) (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 50 mAdc, VCE = 1.0 Vdc) (IC = 100 mAdc, VCE = 1.0 Vdc) (IC = -0.1 mAdc, VCE = -1.0 Vdc) (IC = -1.0 mAdc, VCE = -1.0 Vdc) (IC = -10 mAdc, VCE = -1.0 Vdc) (IC = -50 mAdc, VCE = -1.0 Vdc) (IC = -100 mAdc, VCE = -1.0 Vdc) Collector - Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) (IC = -10 mAdc, IB = -1.0 mAdc) (IC = -50 mAdc, IB = -5.0 mAdc) Base - Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) (IC = -10 mAdc, IB = -1.0 mAdc) (IC = -50 mAdc, IB = -5.0 mAdc) hFE MBT3904DW1T1 (NPN) 40 70 100 60 30 60 80 100 60 30 VCE(sat) MBT3904DW1T1 (NPN) -- -- -- -- VBE(sat) MBT3904DW1T1 (NPN) 0.65 -- -0.65 -- 0.85 0.95 -0.85 -0.95 0.2 0.3 -0.25 -0.4 Vdc -- -- 300 -- -- -- -- 300 -- -- Vdc -- MBT3906DW1T1 (PNP) MBT3906DW1T1 (PNP) MBT3906DW1T1 (PNP) SMALL- SIGNAL CHARACTERISTICS Current - Gain -- Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) (IC = -10 mAdc, VCE = -20 Vdc, f = 100 MHz) Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) (VCB = -5.0 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) (VEB = -0.5 Vdc, IC = 0, f = 1.0 MHz) 2. Pulse Test: Pulse Width 300 s; Duty Cycle 2.0%. fT MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP) Cobo MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP) Cibo MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP) -- -- 8.0 10.0 -- -- 4.0 4.5 pF 300 250 -- -- pF MHz http://onsemi.com 2 MBT3904DW1T1, MBT3906DW1T1, MBT3946DW1T1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Characteristic Input Impedance (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) (VCE = -10 Vdc, IC = -1.0 mAdc, f = 1.0 kHz) Voltage Feedback Ratio (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) (VCE = -10 Vdc, IC = -1.0 mAdc, f = 1.0 kHz) Small - Signal Current Gain (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) (VCE = -10 Vdc, IC = -1.0 mAdc, f = 1.0 kHz) Output Admittance (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) (VCE = -10 Vdc, IC = -1.0 mAdc, f = 1.0 kHz) Noise Figure (VCE = 5.0 Vdc, IC = 100 mAdc, RS = 1.0 k , f = 1.0 kHz) (VCE = -5.0 Vdc, IC = -100 mAdc, RS = 1.0 k , f = 1.0 kHz) MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP) hre MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP) hfe MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP) hoe MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP) NF MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP) -- -- 5.0 4.0 1.0 3.0 40 60 dB 100 100 400 400 0.5 0.1 8.0 10 -- Symbol hie 1.0 2.0 10 12 X 10- 4 Min Max Unit k mmhos SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time (VCC = 3.0 Vdc, VBE = - 0.5 Vdc) (VCC = -3.0 Vdc, VBE = 0.5 Vdc) (IC = 10 mAdc, IB1 = 1.0 mAdc) (IC = -10 mAdc, IB1 = -1.0 mAdc) (VCC = 3.0 Vdc, IC = 10 mAdc) (VCC = -3.0 Vdc, IC = -10 mAdc) (IB1 = IB2 = 1.0 mAdc) (IB1 = IB2 = -1.0 mAdc) MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP) MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP) MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP) MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP) td tr ts tf -- -- -- -- -- -- -- -- 35 35 ns 35 35 200 225 ns 50 75 http://onsemi.com 3 MBT3904DW1T1, MBT3906DW1T1, MBT3946DW1T1 MBT3904DW1T1 (NPN) DUTY CYCLE = 2% 300 ns +3 V +10.9 V 10 k 275 10 < t1 < 500 ms DUTY CYCLE = 2% t1 +3 V +10.9 V 275 10 k 0 - 0.5 V < 1 ns Cs < 4 pF* - 9.1 V < 1 ns 1N916 Cs < 4 pF* * Total shunt capacitance of test jig and connectors Figure 1. Delay and Rise Time Equivalent Test Circuit Figure 2. Storage and Fall Time Equivalent Test Circuit TYPICAL TRANSIENT CHARACTERISTICS TJ = 25C TJ = 125C 10 7.0 CAPACITANCE (pF) 5.0 Cibo 3.0 2.0 Cobo MBT3904DW1T1 (NPN) 5000 3000 2000 Q, CHARGE (pC) 1000 700 500 300 200 100 70 50 QT QA VCC = 40 V IC/IB = 10 MBT3904DW1T1 (NPN) 1.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 40 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 REVERSE BIAS VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA) Figure 3. Capacitance Figure 4. Charge Data http://onsemi.com 4 MBT3904DW1T1, MBT3906DW1T1, MBT3946DW1T1 MBT3904DW1T1 (NPN) 500 300 200 100 70 50 30 20 10 7 5 MBT3904DW1T1 (NPN) td @ VOB = 0 V 1.0 2.0 3.0 5.0 7.0 10 20 30 40 V 15 V 10 2.0 V 50 70 100 200 7 5 MBT3904DW1T1 (NPN) 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 IC/IB = 10 500 300 200 t r, RISE TIME (ns) 100 70 50 30 20 VCC = 40 V IC/IB = 10 TIME (ns) tr @ VCC = 3.0 V IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 5. Turn - On Time 500 300 200 t s, STORAGE TIME (ns) 100 70 50 30 20 10 7 5 MBT3904DW1T1 (NPN) 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 IC/IB = 20 IC/IB = 10 IC/IB = 20 IC/IB = 10 500 300 200 Figure 6. Rise Time ts = ts - 1/8 tf IB1 = IB2 t f , FALL TIME (ns) VCC = 40 V IB1 = IB2 IC/IB = 20 100 70 50 30 20 10 7 5 IC/IB = 10 MBT3904DW1T1 (NPN) 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 7. Storage Time Figure 8. Fall Time TYPICAL AUDIO SMALL- SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS (VCE = 5.0 Vdc, TA = 25C, Bandwidth = 1.0 Hz) 12 10 NF, NOISE FIGURE (dB) 8 6 4 2 0 0.1 SOURCE RESISTANCE = 500 W IC = 100 mA 0.2 0.4 1.0 2.0 4.0 SOURCE RESISTANCE = 200 W IC = 1.0 mA SOURCE RESISTANCE = 200 W IC = 0.5 mA SOURCE RESISTANCE = 1.0 k IC = 50 mA NF, NOISE FIGURE (dB) 14 f = 1.0 kHz 12 10 8 6 4 2 0 0.1 0.2 0.4 1.0 2.0 4.0 MBT3904DW1T1 (NPN) 10 20 40 100 IC = 100 mA IC = 1.0 mA IC = 0.5 mA IC = 50 mA MBT3904DW1T1 (NPN) 10 20 40 100 f, FREQUENCY (kHz) RS, SOURCE RESISTANCE (k OHMS) Figure 9. Noise Figure http://onsemi.com 5 Figure 10. Noise Figure MBT3904DW1T1, MBT3906DW1T1, MBT3946DW1T1 MBT3904DW1T1 (NPN) h PARAMETERS (VCE = 10 Vdc, f = 1.0 kHz, TA = 25C) 300 MBT3904DW1T1 (NPN) h fe , CURRENT GAIN 200 hoe, OUTPUT ADMITTANCE (m mhos) 100 50 MBT3904DW1T1 (NPN) 20 10 5 100 70 50 2 1 30 0.1 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 10 0.1 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 10 Figure 11. Current Gain 20 h ie , INPUT IMPEDANCE (k OHMS) 10 5.0 MBT3904DW1T1 (NPN) hre , VOLTAGE FEEDBACK RATIO (x 10 -4) 10 7.0 5.0 3.0 2.0 Figure 12. Output Admittance MBT3904DW1T1 (NPN) 2.0 1.0 0.5 1.0 0.7 0.5 0.1 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 10 0.2 0.1 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 10 Figure 13. Input Impedance Figure 14. Voltage Feedback Ratio http://onsemi.com 6 MBT3904DW1T1, MBT3906DW1T1, MBT3946DW1T1 MBT3904DW1T1 (NPN) TYPICAL STATIC CHARACTERISTICS h FE, DC CURRENT GAIN (NORMALIZED) 2.0 TJ = +125C 1.0 0.7 0.5 0.3 0.2 - 55C +25C MBT3904DW1T1 (NPN) VCE = 1.0 V 0.1 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) Figure 15. DC Current Gain VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) 1.0 MBT3904DW1T1 (NPN) 0.8 IC = 1.0 mA 10 mA 30 mA 100 mA TJ = 25C 0.6 0.4 0.2 0 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IB, BASE CURRENT (mA) Figure 16. Collector Saturation Region 1.2 TJ = 25C 1.0 V, VOLTAGE (VOLTS) 0.8 VBE @ VCE =1.0 V 0.6 0.4 VCE(sat) @ IC/IB =10 0.2 0 MBT3904DW1T1 (NPN) VBE(sat) @ IC/IB =10 COEFFICIENT (mV/ C) 1.0 MBT3904DW1T1 (NPN) 0.5 +25C TO +125C qVC FOR VCE(sat) 0 - 0.5 - 55C TO +25C - 1.0 +25C TO +125C - 1.5 - 2.0 - 55C TO +25C qVB FOR VBE(sat) 1.0 2.0 5.0 10 20 50 100 200 0 20 40 60 80 100 120 140 160 180 200 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 17. "ON" Voltages Figure 18. Temperature Coefficients http://onsemi.com 7 MBT3904DW1T1, MBT3906DW1T1, MBT3946DW1T1 MBT3906DW1T1 (PNP) 3V +9.1 V 275 < 1 ns +0.5 V 10 k 0 Cs < 4 pF* 10.6 V 300 ns DUTY CYCLE = 2% 10 < t1 < 500 ms DUTY CYCLE = 2% * Total shunt capacitance of test jig and connectors t1 10.9 V 1N916 10 k < 1 ns 3V 275 Cs < 4 pF* Figure 19. Delay and Rise Time Equivalent Test Circuit Figure 20. Storage and Fall Time Equivalent Test Circuit TYPICAL TRANSIENT CHARACTERISTICS TJ = 25C TJ = 125C 10 7.0 CAPACITANCE (pF) 5.0 Cobo Cibo 3.0 2.0 MBT3906DW1T1 (PNP) 5000 3000 2000 Q, CHARGE (pC) 1000 700 500 300 200 100 70 50 VCC = 40 V IC/IB = 10 MBT3906DW1T1 (PNP) QT QA 1.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 REVERSE BIAS (VOLTS) 20 30 40 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) 200 Figure 21. Capacitance 500 300 200 100 70 50 30 20 10 7 5 MBT3906DW1T1 (PNP) IC/IB = 10 500 300 200 t f , FALL TIME (ns) 100 70 50 30 20 10 7 5 Figure 22. Charge Data MBT3906DW1T1 (PNP) IC/IB = 20 VCC = 40 V IB1 = IB2 TIME (ns) tr @ VCC = 3.0 V 15 V 40 V 2.0 V td @ VOB = 0 V 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 IC/IB = 10 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 23. Turn - On Time Figure 24. Fall Time http://onsemi.com 8 MBT3904DW1T1, MBT3906DW1T1, MBT3946DW1T1 MBT3906DW1T1 (PNP) TYPICAL AUDIO SMALL- SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS (VCE = - 5.0 Vdc, TA = 25C, Bandwidth = 1.0 Hz) 5.0 SOURCE RESISTANCE = 200 W IC = 1.0 mA NF, NOISE FIGURE (dB) SOURCE RESISTANCE = 200 W IC = 0.5 mA SOURCE RESISTANCE = 2.0 k IC = 50 mA 12 f = 1.0 kHz 10 IC = 0.5 mA 8 6 4 2 MBT3906DW1T1 (PNP) 20 40 100 0 0.1 0.2 IC = 50 mA IC = 100 mA MBT3906DW1T1 (PNP) 0.4 1.0 2.0 4.0 10 20 Rg, SOURCE RESISTANCE (k OHMS) 40 100 IC = 1.0 mA NF, NOISE FIGURE (dB) 4.0 3.0 2.0 SOURCE RESISTANCE = 2.0 k IC = 100 mA 0.2 0.4 1.0 0 0.1 1.0 2.0 4.0 10 f, FREQUENCY (kHz) Figure 25. Figure 26. h PARAMETERS (VCE = - 10 Vdc, f = 1.0 kHz, TA = 25C) 300 hoe, OUTPUT ADMITTANCE (m mhos) MBT3906DW1T1 (PNP) h fe , DC CURRENT GAIN 200 100 70 50 30 20 MBT3906DW1T1 (PNP) 100 70 50 10 7 30 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 7.0 10 5 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 7.0 10 Figure 27. Current Gain 20 h ie , INPUT IMPEDANCE (k OHMS) 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 MBT3906DW1T1 (PNP) hre , VOLTAGE FEEDBACK RATIO (x 10 -4) 10 7.0 5.0 3.0 2.0 Figure 28. Output Admittance MBT3906DW1T1 (PNP) 1.0 0.7 0.5 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 7.0 10 Figure 29. Input Impedance Figure 30. Voltage Feedback Ratio http://onsemi.com 9 MBT3904DW1T1, MBT3906DW1T1, MBT3946DW1T1 MBT3906DW1T1 (PNP) TYPICAL STATIC CHARACTERISTICS h FE, DC CURRENT GAIN (NORMALIZED) 2.0 TJ = +125C 1.0 0.7 0.5 0.3 MBT3906DW1T1 (PNP) 0.2 - 55C +25C VCE = 1.0 V 0.1 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (mA) 20 30 50 70 100 200 Figure 31. DC Current Gain VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) 1.0 MBT3906DW1T1 (PNP) 0.8 IC = 1.0 mA 10 mA 30 mA TJ = 25C 100 mA 0.6 0.4 0.2 0 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 IB, BASE CURRENT (mA) 0.7 1.0 2.0 3.0 5.0 7.0 10 Figure 32. Collector Saturation Region q V , TEMPERATURE COEFFICIENTS (mV/ C) 1.0 TJ = 25C 0.8 V, VOLTAGE (VOLTS) VBE(sat) @ IC/IB = 10 VBE @ VCE = 1.0 V 1.0 0.5 0 - 0.5 - 1.0 - 55C TO +25C - 1.5 - 2.0 MBT3906DW1T1 (PNP) +25C TO +125C qVC FOR VCE(sat) +25C TO +125C 0.6 MBT3906DW1T1 (PNP) 0.4 VCE(sat) @ IC/IB = 10 - 55C TO +25C 0.2 qVB FOR VBE(sat) 0 1.0 2.0 50 5.0 10 20 IC, COLLECTOR CURRENT (mA) 100 200 0 20 40 60 80 100 120 140 IC, COLLECTOR CURRENT (mA) 160 180 200 Figure 33. "ON" Voltages Figure 34. Temperature Coefficients http://onsemi.com 10 MBT3904DW1T1, MBT3906DW1T1, MBT3946DW1T1 INFORMATION FOR USING THE SOT-363 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process. SOT-363 0.5 mm (min) 1.9 mm SOT-363 POWER DISSIPATION The power dissipation of the SOT-363 is a function of the pad size. This can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by TJ(max), the maximum rated junction temperature of the die, RJA, the thermal resistance from the device junction to ambient, and the operating temperature, TA. Using the values provided on the data sheet for the SOT-363 package, PD can be calculated as follows: PD = TJ(max) - TA RJA The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into the equation for an ambient temperature TA of 25C, one can calculate the power dissipation of the device which in this case is 150 milliwatts. PD = 150C - 25C 833C/W = 150 milliwatts The 833C/W for the SOT-363 package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 150 milliwatts. There are other alternatives to achieving higher power dissipation from the SOT-363 package. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal CladTM. Using a board material such as Thermal Clad, an aluminum core board, the power dissipation can be doubled using the same footprint. The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. * Always preheat the device. * The delta temperature between the preheat and soldering should be 100C or less.* * When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference shall be a maximum of 10C. * The soldering temperature and time shall not exceed 260C for more than 10 seconds. * When shifting from preheating to soldering, the maximum temperature gradient shall be 5C or less. * After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. * Mechanical stress or shock should not be applied during cooling. * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device. http://onsemi.com 11 EEE EEE EEE EEE EEE EEE EEE EEE EEE EEE EEE EEE EEE EEE EEE EEE 0.4 mm (min) SOLDERING PRECAUTIONS 0.65 mm 0.65 mm MBT3904DW1T1, MBT3906DW1T1, MBT3946DW1T1 PACKAGE DIMENSIONS SOT-363/SC-88 CASE 419B-01 ISSUE G A G V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 6 5 4 S 1 2 3 -B- D 6 PL 0.2 (0.008) M B M N J C DIM A B C D G H J K N S V INCHES MIN MAX 0.071 0.087 0.045 0.053 0.031 0.043 0.004 0.012 0.026 BSC --- 0.004 0.004 0.010 0.004 0.012 0.008 REF 0.079 0.087 0.012 0.016 MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.80 1.10 0.10 0.30 0.65 BSC --- 0.10 0.10 0.25 0.10 0.30 0.20 REF 2.00 2.20 0.30 0.40 STYLE 1: PIN 1. 2. 3. 4. 5. 6. EMITTER 2 BASE 2 COLLECTOR 1 EMITTER 1 BASE 1 COLLECTOR 2 H K Thermal Clad is a trademark of the Bergquist Company. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION North America Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: ONlit@hibbertco.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada EUROPE: LDC for ON Semiconductor - European Support German Phone: (+1) 303-308-7140 (M-F 2:30pm to 5:00pm Munich Time) Email: ONlit-german@hibbertco.com French Phone: (+1) 303-308-7141 (M-F 2:30pm to 5:00pm Toulouse Time) Email: ONlit-french@hibbertco.com English Phone: (+1) 303-308-7142 (M-F 1:30pm to 5:00pm UK Time) Email: ONlit@hibbertco.com ASIA/PACIFIC: LDC for ON Semiconductor - Asia Support Phone: 303-675-2121 (Tue-Fri 9:00am to 1:00pm, Hong Kong Time) Toll Free from Hong Kong 800-4422-3781 Email: ONlit-asia@hibbertco.com JAPAN: ON Semiconductor, Japan Customer Focus Center 4-32-1 Nishi-Gotanda, Shinagawa-ku, Tokyo, Japan 141-8549 Phone: 81-3-5487-8345 Email: r14153@onsemi.com Fax Response Line: 303-675-2167 800-344-3810 Toll Free USA/Canada ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. http://onsemi.com 12 MBT3904DW1T1/D |
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